## GATE 2016 EC SET B QUESTION 36

Consider avalanche breakdown in a silicon p^{+}n junction. The n-region is uniformly doped with a donor density N_{D}. Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field E_{crit}.Assume E_{crit} to be independent

of N_{D}.If the built-in voltage of the p^{+}n junction is much smaller than the breakdown voltage,

V_{BR}, the relationship between V_{BR} and N_{D} is given by

(A)V_{BR }× √N_{D}= constant (B) N_{D} × √V_{BR }=constant

(C) N_{D} × V_{BR }=constant (D) N_{D}/V_{BR }=constant