GATE 2016 EC SET B QUESTION 36


GATE 2016 EC SET B QUESTION 36

Consider avalanche breakdown in a silicon p+n junction. The n-region is uniformly doped with a donor density ND. Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field Ecrit.Assume Ecrit to be independent
of ND.If the built-in voltage of the p+n junction is much smaller than the breakdown voltage,
VBR, the relationship between VBR and ND is given by
(A)VBR × √ND= constant            (B) ND × √VBR =constant
(C) ND × VBR =constant             (D) ND/VBR =constant

Solution 

If the depletion region is not making any change it means ND× VBR = constant

Answer to GATE 2016 EC Set B Question 36 is option C


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